Jifa Hao
11Patents
5h-index
10Co-inventors
59Inventor score
Filing activity: Feb 22, 1999 → Jun 26, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6573569B2 | Trench MOSFET with low gate charge | Electricity | 23 | Expired |
| US6635535B2 | Dense trench MOSFET with decreased etch sensitivity to deposition and etch processing | Electricity | 22 | Expired |
| US7436021B2 | Dense trench MOSFET with decreased etch sensitivity to deposition and etch processing | Electricity | 16 | Expired |
| US6077744A | Semiconductor trench MOS devices | Electricity | 7 | Expired |
| US6358825B1 | Process for controlling lifetime in a P-I-N diode and for forming diode with improved lifetime control | Electricity | 6 | Expired |
| US8872278B2 | Integrated gate runner and field implant termination for trench devices | Electricity | 5 | Active |
| US7897471B2 | Method and apparatus to improve the reliability of the breakdown voltage in high voltage devices | Electricity | 5 | Active |
| US7332750B1 | Power semiconductor device with improved unclamped inductive switching capability and process for forming same | Electricity | 2 | Expired |
| US8269277B2 | RESURF device including increased breakdown voltage | Electricity | 1 | Active |
| US9537001B2 | Reduction of degradation due to hot carrier injection | Electricity | 1 | Active |
| US8357562B2 | Method to improve the reliability of the breakdown voltage in high voltage devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.