Hydrogen ion implanter using a broad beam source
US7897945B2 · kind B2 · utility
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13References
15Claims
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Key dates
| Filing date | Sep 25, 2008 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Aug 7, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Ion implanters incorporating multibeam ion sources are used to meet process dose and energy demands associated with fabricating a thin lamina for use in photovoltaic devices. The thin lamina are formed by ion implantation followed by cleaving.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.