Lateral bipolar junction transistor with reduced base resistance
US7897995B2 · kind B2 · utility
18Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2009 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Sep 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/27
Abstract
A lateral bipolar junction transistor formed in a semiconductor substrate includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; a collector region having at least one open side and being disposed about a periphery of the base region; a shallow trench isolation (STI) region disposed about a periphery of the collector region; a base contact region disposed about a periphery of the STI region; and an extension region merging with the base contact region and laterally extending to the gate on the open side of the collector region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.