Semiconductor device
US7898033B2 · kind B2 · utility
2Cited by
2References
16Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jun 16, 2006 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Oct 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
Abstract
A semiconductor device according to this invention is provided with a MOS transistor of at least one type, wherein the MOS transistor has a semiconductor layer (SOI layer) provided on an SOI substrate and a gate electrode provided on the SOI layer and is normally off by setting the thickness of the SOI layer so that the thickness of a depletion layer caused by a work function difference between the gate electrode and the SOI layer becomes greater than that of the SOI layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.