Resistive sense memory calibration for self-reference read method
US7898838B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2009 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Jul 25, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/2254
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Resistive memory calibration for self-reference read methods are described. One method of self-reference reading a resistive memory unit includes setting a plurality of resistive memory units to a first resistive data state. The resistive memory units forms a memory array. Reading a sensed resistive data state for each resistive memory unit by applying a first read current and a second read current through each resistive memory unit and then comparing voltages formed by the first read current and the second read current to determine the sensed resistive data state for each resistive memory unit. Then the method includes adjusting the first or the second read current, read voltages, or storage device capacitance for each resistive memory unit where the sensed resistive data state was not the same as the first resistive data state until the sensed resistive data state is the same as the first resistive data state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.