Patent · US Active

Magnetoresistive element

US7898846B2 · kind B2 · utility

4Cited by
0References
5Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 22, 2009
Grant dateMar 1, 2011
Priority date
Expiry dateMay 26, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B61/22
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagnetic cap layer which contacts the second surface of the first magnetic layer and is formed from an alloy of a first metal material and a second metal material, the first metal material having a second standard electrode potential lower than the first standard electrode potential, the second metal material having a third standard electrode potential higher than the first standard electrode potential.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.