Window enlargement by selective erase of non-volatile memory cells
US7898873B2 · kind B2 · utility
1Cited by
5References
23Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 16, 2009 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Aug 22, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is described for enlarging a programming window of charge trapping memory cells in a virtual ground charge trapping memory EEPROM array. The method substantially eliminates second bit effects and program disturbances to nearby charge trapping memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.