EL semiconductor device
US7899104B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 27, 2008 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Jul 25, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3059
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppressing the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.