Method of low temperature imprinting process with high pattern transfer yield
US7901607B2 · kind B2 · utility
15Cited by
8References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2006 |
| Grant date | Mar 8, 2011 |
| Priority date | — |
| Expiry date | Dec 21, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/887
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention is directed to novel methods of imprinting substrate-supported or freestanding structures at low cost, with high pattern transfer yield, and using low processing temperature. Such methods overcome many of the above-described limitations of the prior art. Generally, such methods of the present invention employ a sacrificial layer of film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.