Method of manufacturing non-volatile semiconductor storage device
US7902023B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2010 |
| Grant date | Mar 8, 2011 |
| Priority date | — |
| Expiry date | Aug 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/30
Abstract
A non-volatile semiconductor storage device includes: a substrate; a control circuit layer provided on the substrate; a support layer provided on the control circuit layer; and a memory cell array layer provided on the support layer. The memory cell array layer includes: a first lamination part having first insulation layers and first conductive layers alternately laminated therein; and a second lamination part provided on either the top or bottom surface of the respective first lamination part and laminated so as to form a second conductive layer between second insulation layers. The control circuit layer includes at least any one of: a row decoder driving word lines provided in the memory cell array layer, and a sense amplifier sensing and amplifying a signal from bit lines provided in the memory cell array layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.