Methods and devices for a high-k stacked capacitor

US7902033B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Byron Lovell Williams · Plano, US
• Maxwell Lippitt · Satellite Beach, US
• Betty Mercer · Plano, US
• Scott Montgomery · Rowlett, US
• Binghua Hu · Plano, US

Key dates

• Filing date: Feb 12, 2008
• Grant date: Mar 8, 2011
• Expiry date: Sep 23, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/716

Abstract

An embodiment generally relates a method of forming capacitors. The method includes forming a plurality of holes within a protective overcoat or backend dielectric layer of an integrated circuit and depositing multiple layers of metal, each layer of metal electrically tied to an associated electrode. The method also includes alternately depositing multiple layers of dielectric between the multiple layers of metal and coupling a bottom layer of the multiple layers of metal to a contact node in a top metal layer of the integrated circuit.