Method for depositing high-quality microcrystalline semiconductor materials
US7902049B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2004 |
| Grant date | Mar 8, 2011 |
| Priority date | — |
| Expiry date | Jan 27, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.