Patent · US Active

Field-effect microelectronic device, capable of forming one or several transistor channels

US7902575B2 · kind B2 · utility

3Cited by

10References

9Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Thomas Ernst · Morette, FR
Stephan Borel · Crolles, FR

Key dates

Filing date	Feb 27, 2009
Grant date	Mar 8, 2011
Priority date	—
Expiry date	Feb 27, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/121
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

The invention relates to a field-effect microelectronic device, as well as the method of production thereof. The device includes a substrate as well as at least one improved structure capable of forming one or more transistor channels. This structure, formed by a plurality of bars stacked on the substrate, can make it possible to save space in the integration of field-effect transistors as well as to improve the performance thereof.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.