Semiconductor device with trench isolation structure
US7902628B2 · kind B2 · utility
3Cited by
12References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2009 |
| Grant date | Mar 8, 2011 |
| Priority date | — |
| Expiry date | Apr 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a semiconductor device with a device isolation structure and a method for fabricating the same. The semiconductor device includes: a substrate provided with a trench formed in the substrate; and at least one device isolation structure including an oxide layer formed on the trench, a nitride layer formed on the oxide layer disposed on sidewalls of the trench and a high density plasma oxide layer formed on the nitride layer to fill the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.