Nano structure and method of manufacturing nano structure
US7902637B2 · kind B2 · utility
1Cited by
2References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 25, 2008 |
| Grant date | Mar 8, 2011 |
| Priority date | — |
| Expiry date | Nov 20, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3083
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nano structure formed on the surface of a substrate containing Si and having a pattern of at least 2 μm in depth, in which Ga or In is contained in the surface of the pattern, and the Ga or the In has a concentration distribution that an elemental composition ratio Ga/Si or In/Si of Si and Ga or In detected by an X-ray photoelectron spectroscopy is at least 0.4 atomic percent in the depth direction of the substrate, and the maximum value of the concentration is positioned within 50 nm of the surface of the pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.