Apparatus and method for test structure inspection
US7902849B2 · kind B2 · utility
79Cited by
14References
10Claims
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Key dates
| Filing date | Jan 3, 2007 |
| Grant date | Mar 8, 2011 |
| Priority date | — |
| Expiry date | Nov 7, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/305
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Herein are described layouts of test structures and scanning methodologies that allow large probe currents to be used so as to allow the detection of resistive defects with a resistance lower than 1 MΩ while at the same time allowing a sufficient degree of localization to be obtained for root cause failure analysis. The detection of resistances lower than 1 MΩ nominally requires a probe current greater than 1 micro ampere for detection on an electron beam inspection system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.