Patent · US Active

Magnetoresistive memory cell

US7903452B2 · kind B2 · utility

3Cited by

4References

38Claims

0Family size

Assignees

Qimonda AG · DE
Altis Semiconductor, SNC · FR

Inventors

Rok Dittrich · Brussels, BE
Ulrich Klostermann · Fontainebleau, FR

Key dates

Filing date	Jun 23, 2006
Grant date	Mar 8, 2011
Priority date	—
Expiry date	May 19, 2027

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/5607
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A magnetoresistive memory cell has a magnetic stack providing an effective anisotropy field of a storage layer of the magnetic stack during thermal select heating, at least one line providing at least one external magnetic field to the magnetic stack, the effective anisotropy field and the at least one external magnetic field having a non-zero angle relative to one another.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.