Method for manufacturing a magnetic memory device and magnetic memory device
US7906346B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2008 |
| Grant date | Mar 15, 2011 |
| Priority date | — |
| Expiry date | Feb 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a magnetic memory device which includes a TMR element, and the method includes: a step of forming a lower wiring layer; a step of forming an interlayer insulating layer on the lower wiring layer; a step of forming an opening in the interlayer insulating layer so that the lower wiring layer is exposed; a step of forming a barrier metal layer so that the interlayer insulating layer and an inner surface of the opening are covered; a step of forming a metal layer on the barrier metal layer so that the opening is embedded; a polishing step of removing the metal layer on the barrier metal layer through polishing using the barrier metal layer as a stopper so that a wiring layer that includes a metal layer being embedded in the opening and the barrier metal layer is formed; and an element fabricating step of fabricating a TMR element on the wiring layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.