Inventor · Kawanishi, JP

Tatsuya Fukumura

14Patents

3h-index

24Co-inventors

56Inventor score

Filing activity: Apr 8, 2003 → Jul 12, 2016

Most-cited inventions

Patent	Title	Area	Cited by	Status
US7015090B2	Method of manufacturing a semiconductor device having trenches for isolation and capacitor formation trenches	Electricity	19	Expired
US7462905B2	Nonvolatile semiconductor memory device, semiconductor device and method of manufacturing nonvolatile semiconductor memory device	Electricity	7	Active
US7064380B2	Semiconductor device and a method of manufacturing the same	Physics	5	Expired
US7312123B2	Semiconductor device and a method of manufacturing the same	Physics	3	Expired
US8466507B2	Semiconductor device and a method of manufacturing the same	Physics	2	Active
US8546151B2	Method for manufacturing magnetic storage device and magnetic storage device	Electricity	2	Active
US9391178B2	Method of manufacturing semiconductor device	Electricity	2	Active
US8212305B2	Semiconductor device with improved insulating film and floating gate arrangement to decrease memory cell size without reduction of capacitance	Physics	2	Active
US7906346B2	Method for manufacturing a magnetic memory device and magnetic memory device	Electricity	2	Active
US9666239B2	Semiconductor device	Electricity	2	Active
US9412747B2	Semiconductor device and a method of manufacturing the same	Physics	0	Active
US7662686B2	Semiconductor device and a method of manufacturing the same	Physics	0	Active
US10147738B2	Semiconductor device and method for manufacturing semiconductor device	Electricity	0	Active
US8907399B2	Semiconductor device with flash memory cells having improved arrangement for floating gate electrodes and control gate electrodes of the flash memory cells	Physics	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.