Semiconductor device and method for manufacture
US7906388B2 · kind B2 · utility
17Cited by
7References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 12, 2006 |
| Grant date | Mar 15, 2011 |
| Priority date | — |
| Expiry date | Feb 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is formed by forming a second trench 120 at the base of a first trench 18, depositing insulator 124 at the base of the second trench 120, and then etching cavities 26 laterally from the sidewalls of the second trench, but not the base which is protected by insulator 124. The invention may in particular be used to form semiconductor devices with cavities under the active components, or by filling the cavities to form silicon on insulator or silicon on conductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.