Method of fabricating semiconductor device
US7906398B2 · kind B2 · utility
1Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2008 |
| Grant date | Mar 15, 2011 |
| Priority date | — |
| Expiry date | Jan 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of fabricating a semiconductor device having vertical channels and a method of patterning a gate electrode of such semiconductor device, an initial conductive layer is removed by multiple etching processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.