Method of fabricating group III nitride semiconductor single crystal, and method of fabricating group III nitride semiconductor single crystal substrate
US7906412B2 · kind B2 · utility
3Cited by
1References
14Claims
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Key dates
| Filing date | Jun 15, 2009 |
| Grant date | Mar 15, 2011 |
| Priority date | — |
| Expiry date | Jul 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0254
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of fabricating a group III nitride semiconductor single crystal includes preparing a seed substrate which includes group III nitride semiconductor and has a crystal growth face of single index plane, and epitaxially growing the group III nitride semiconductor single crystal on the crystal growth face, wherein the group III nitride semiconductor single crystal is epitaxially grown while being surrounded by a plurality of crystal surfaces including low-index planes spontaneously formed, and the low-index planes have a structure that each of plane indices showing a crystal plane is not more than 3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.