Dimension profiling of SiC devices
US7906427B2 · kind B2 · utility
1Cited by
15References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2008 |
| Grant date | Mar 15, 2011 |
| Priority date | — |
| Expiry date | Nov 20, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P80/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method for dimension profiling of a semiconductor device. The method involves incorporating a feature comprising a detectable element into the device, and thereafter detecting the detectable element to determine a dimension of the feature. This information can be used for the determination of a dimension of buried channels, and also for end-point detection of CMP processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.