Patent · US Active

Semiconductor element and a method for producing the same

US7906802B2 · kind B2 · utility

18Cited by

0References

27Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Peter Baumgartner · Munich, DE
Domagoj Siprak · Munich, DE

Key dates

Filing date	Jan 28, 2009
Grant date	Mar 15, 2011
Priority date	—
Expiry date	Apr 22, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/834
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

Some embodiments comprise a plurality of fins, wherein at least a first fin of the plurality of fins comprises a different fin width compared to a fin width of another fin of the plurality of fins. At least a second fin of the plurality of fins comprises a different crystal surface orientation compared to another fin of the plurality of fins.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.