Patent · US Active

Many million pixel image sensor

US7906826B2 · kind B2 · utility

42Cited by

2References

9Claims

0Family size

Assignee

e-Phocus · US

Inventors

Peter Martin · Richmond, US
Paul Johnson · Blue Earth, US
Chris Sexton · San Diego, US

Key dates

Filing date	Sep 28, 2007
Grant date	Mar 15, 2011
Priority date	—
Expiry date	Nov 8, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH10F39/1847
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

A CMOS image sensor with a many million pixel count. Applicants have developed techniques for combining its continuous layer photodiode CMOS sensor technology with CMOS integrated circuit lithography stitching techniques to provide digital cameras with an almost unlimited number of pixels. A preferred CMOS stitching technique exploits the precise alignment accuracy of CMOS stepper processes by using specialized mask sets to repeatedly produce a single pixel array pattern many times on a single silicon wafer with no pixel array discontinuities. The single array patterns are stitched together lithographically to form a pixel array of many million pixels. A continuous multilayer photodiode layer is deposited over the top of the many million pixel array to provide a many million pixel sensor with a fill factor of 100 percent or substantially 100 percent.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.