Reading method of a memory device with embedded error-correcting code and memory device with embedded error-correcting code
US7908543B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Mar 1, 2007 |
| Grant date | Mar 15, 2011 |
| Priority date | — |
| Expiry date | Jan 12, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B20/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A reading method for a memory device with error-correcting encoding envisages the steps of: carrying out a first reading of a plurality of memory locations (A0, A1, . . . , ALS−1) to generate a first recovered string (S1), and performing a first decoding attempt using the first recovered string (S1). When the first decoding attempt fails, the memory locations are read at least one second time, and at least one second recovered string (S2-SN) is generated. On the basis of a comparison between the first recovered string (S1) and the second recovered string (S2-SN), a modified string (SM) is generated, in which erasures (X) are located, and at least one second decoding attempt is carried out using the modified string (SM).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.