Sputtering target with few surface defects, and surface processing method thereof
US7909949B2 · kind B2 · utility
27Cited by
5References
3Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 15, 2005 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Feb 1, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49989
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a surface processing method of a sputtering target, wherein a target surface in which intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in a highly ductile matrix phase at a volume ratio of 1 to 50% is preliminarily subject to the primary processing of cutting work, then subsequently subject to finish processing via polishing. The sputtering target subject to this surface processing method is able to improve the target surface having numerous substances without ductility, and prevent or suppress the generation of nodules and particles upon sputtering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.