Patent · US Active

Low-energy method for fabrication of large-area sputtering targets

US7910051B2 · kind B2 · utility

30Cited by

73References

9Claims

0Family size

Assignee

H.C. STARCK INC. · US

Inventors

Stefan Zimmermann · Laufenbürg, DE
Steve Miller · Canton, US
Prabhat Kumar · Framingham, US
Mark Gaydos · Nashua, US

Key dates

Filing date	Nov 5, 2007
Grant date	Mar 22, 2011
Priority date	—
Expiry date	Jul 7, 2029

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T29/4902
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

In various embodiments, large-area sputtering targets are formed by providing a plurality of sputtering targets each comprising a backing plate and a refractory metal layer disposed thereon, and spray depositing a refractory metal powder on an interface between the sputtering targets, the refractory metal powder consisting essentially of the same metal as each refractory metal layer, thereby joining the refractory metal layers of the sputtering targets.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.