Through-silicon via with air gap
US7910473B2 · kind B2 · utility
21Cited by
0References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 31, 2008 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Aug 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate having a through-silicon via with an air gap interposed between the through-silicon via and the semiconductor substrate is provided. An opening is formed partially through the semiconductor substrate. The opening is first lined with a liner and then the opening is filled with a conductive material. A backside of the semiconductor substrate is thinned to expose the liner, which is subsequently removed to form an air gap around the conductive material of the through-silicon via. A dielectric layer is formed of the backside of the semiconductor substrate to seal the air gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.