Phase-change memory cell and method of fabricating the phase-change memory cell
US7910910B2 · kind B2 · utility
2Cited by
12References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2008 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Nov 24, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/52
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell (and method of fabricating the memory cell) includes a stencil layer having a first opening, a phase-change material layer formed on a first electrode layer, and an electrically conductive layer formed on the first electrode layer, the electrically conductive layer having a pillar-shaped portion which is formed on the phase-change material layer and fills the first opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.