Structure and method for realizing a microelectronic device provided with a number of quantum wires capable of forming one or more transistor channels
US7910917B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2006 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | May 15, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6735
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A microelectronic device provided with one or more quantum wires, able to form one or more transistor channels, and optimized in terms of arrangement, shape, and/or composition. A method for fabricating the device includes forming, in one or more thin layers resting on a support, a first block and a second block in which at least one transistor drain region and at least one transistor source region are respectively intended to be formed, forming a structure connecting the first block to the second block, and forming, on the surface of the structure, wires connecting a first region of the first block with another region of the second block that faces the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.