Patent · US Active

Directionally controlled growth of nanowhiskers

US7911035B2 · kind B2 · utility

18Cited by

25References

24Claims

0Family size

Assignee

QUNANO AB · SE

Inventors

Werner Seifert · Bargteheide, DE
Lars Samuelson · Malmö, SE
Bjorn Jonas Ohlsson · Malmö, SE
Lars Borgstrom · Henån, SE

Key dates

Filing date	Jan 4, 2008
Grant date	Mar 22, 2011
Priority date	—
Expiry date	Jan 4, 2028

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/825
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, <001> III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substrate surface by effectively inhibiting growth in the preferential <111>B direction. As one example, <001> InP nano-wires were grown by metal-organic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy revealed wires with nearly square cross sections and a perfect zincblende crystalline structure that is free of stacking faults.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.