Method for cleaning an EUV lithography device, method for measuring the residual gas atmosphere and the contamination and EUV lithography device

US7911598B2 · kind B2 · utility

Assignee

• Carl Zeiss SMT GmbH · DE

Inventors

• Dieter Kraus · Munich, DE
• Dirk Heinrich Ehm · Beckingen, DE
• Thomas Stein · Oberkochen, DE
• Harald Woelfle · Waldkirch, DE
• Stefan Schmidt · Aalen, DE

Key dates

• Filing date: Sep 8, 2009
• Grant date: Mar 22, 2011
• Expiry date: Sep 18, 2029

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/70925
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

Components (30) in the interior of an EUV lithography device for extreme ultraviolet and soft X-ray wavelength range are cleaned by igniting a plasma, adjacent to the component (30) to be cleaned, using electrodes (29), wherein the electrodes (29) are adapted to the form of the component (30) to be cleaned. The residual gas atmosphere is measured spectroscopically on the basis of the plasma. An emission spectrum is preferably recorded in order to monitor the degree of cleaning. An optical fiber cable (31) with a coupling-in optical unit (32) is advantageously used for this purpose. Moreover, in order to monitor the contamination in the gas phase within the vacuum chambers during the operation of an EUV lithography device, it is proposed to provide modules configured to initiate a gas discharge and to detect radiation emitted on account of the gas discharge. The contamination in the gas phase can be deduced from the analysis of the measured spectrum.