Metal gate stress film for mobility enhancement in FinFET device

US7915112B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Jeff J. Xu · Zhubeikou, TW
• Clement Hsingjen Wann · Carmel, US
• Chi Chieh Yeh · Taipei, TW
• Chi Chang · Redwood City, US

Key dates

• Filing date: Sep 23, 2008
• Grant date: Mar 29, 2011
• Expiry date: Oct 8, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

A CMOS FinFET semiconductor device provides an NMOS FinFET device that includes a compressive stress metal gate layer over semiconductor fins and a PMOS FinFET device that includes a tensile stress metal gate layer over semiconductor fins. A process for forming the same includes a selective annealing process that selectively converts a compressive metal gate film formed over the PMOS device to the tensile stress metal gate film.