Method of making multi-layer structure for metal-insulator-metal capacitor
US7915135B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2009 |
| Grant date | Mar 29, 2011 |
| Priority date | — |
| Expiry date | Jun 18, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/43
Abstract
The present invention discloses a method of making a multi-layer structure for metal-insulator-metal capacitors, in which, a bottom electrode plate layer is formed on a substrate, wherein a Ti/TiN layer serving as a top anti-reflection coating (top ARC) of the bottom electrode plate layer including a titanium layer and a titanium nitride layer formed on the titanium layer is formed using a first and a second physical vapor deposition (PVD) processes at a temperature ranging from 25 to 400° C., and then a first capacitor dielectric layer, a middle electrode plate layer, a second capacitor dielectric layer, and a top electrode plate layer are formed on the bottom electrode plate layer in an order from bottom to top.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.