Method of forming gate insulation film, semiconductor device, and computer recording medium
US7915177B2 · kind B2 · utility
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2References
8Claims
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Assignee
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Key dates
| Filing date | Jan 27, 2010 |
| Grant date | Mar 29, 2011 |
| Priority date | — |
| Expiry date | Jan 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the present invention, when a gate insulation film in a DRAM is formed, an oxide film constituting a base of the gate insulation film is plasma-nitrided. The plasma nitridation is performed with microwave plasma generated by using a plane antenna having a large number of through holes. Nitrogen concentration in the gate insulation film formed by the plasma nitridation is 5 to 20% in atomic percentage. Even without subsequent annealing, it is possible to effectively prevent a boron penetration phenomenon in the DRAM and to reduce traps in the film causing deterioration in driving capability of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.