Tatsuo Nishita
16Patents
5h-index
18Co-inventors
63Inventor score
Filing activity: Feb 6, 2002 → Oct 17, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8366953B2 | Plasma cleaning method and plasma CVD method | Electricity | 81 | Active |
| US7156923B2 | Silicon nitride film forming method, silicon nitride film forming system and silicon nitride film forming system precleaning method | Emerging Cross-Sectional Technologies | 10 | Expired |
| US7674722B2 | Method of forming gate insulating film, semiconductor device and computer recording medium | Electricity | 8 | Expired |
| US6844273B2 | Precleaning method of precleaning a silicon nitride film forming system | Emerging Cross-Sectional Technologies | 8 | Expired |
| US8258571B2 | MOS semiconductor memory device having charge storage region formed from stack of insulating films | Electricity | 8 | Active |
| US7304002B2 | Method of oxidizing member to be treated | Electricity | 4 | Expired |
| US8119545B2 | Forming a silicon nitride film by plasma CVD | Electricity | 1 | Active |
| US11676847B2 | Substrate placing table and substrate processing apparatus | Electricity | 0 | Active |
| US8114790B2 | Plasma CVD method, silicon nitride film formation method, semiconductor device manufacturing method, and plasma CVD apparatus | Electricity | 0 | Active |
| US11217470B2 | Substrate placing table and substrate processing apparatus | Electricity | 0 | Active |
| US8138103B2 | Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device | Electricity | 0 | Active |
| US7915177B2 | Method of forming gate insulation film, semiconductor device, and computer recording medium | Electricity | 0 | Active |
| US8329596B2 | Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device | Electricity | 0 | Active |
| US8569186B2 | Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device | Electricity | 0 | Active |
| US11508603B2 | Substrate placing table and substrate processing apparatus | Electricity | 0 | Active |
| US8318614B2 | Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma apparatus | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.