Textured light emitting diodes
US7915622B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 27, 2005 |
| Grant date | Mar 29, 2011 |
| Priority date | — |
| Expiry date | Apr 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
Abstract
A high fill factor textured light emitting diode structure comprises: a first textured cladding and contact layer (2) comprising a doped III-V or II-VI group compound semiconductor or alloys of such semiconductors deposited by epitaxial lateral overgrowth (ELOG) onto a patterned substrate (1); a textured undoped or doped active layer (3) comprising a III-V or II-VI group semiconductor or alloys of such semiconductors and where radiative recombination of electrons aid holes occurs or intersubband transition occurs; and a second textured cladding and contact layer (4) comprising a doped III-V or II-VI group semiconductor or alloys of such semiconductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.