Wang Nang Wang
30Patents
9h-index
27Co-inventors
75Inventor score
Filing activity: Aug 15, 1990 → Jun 19, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6614060B1 | Light emitting diodes with asymmetric resonance tunnelling | Electricity | 86 | Expired |
| US6614170B2 | Light emitting diode with light conversion using scattering optical media | Emerging Cross-Sectional Technologies | 45 | Expired |
| US6455870B1 | Unipolar light emitting devices based on III-nitride semiconductor superlattices | Electricity | 36 | Expired |
| US7050233B2 | Precision phase retardation devices and method of making same | Physics | 23 | Expired |
| US6284556A | Diamond surfaces | Electricity | 21 | Expired |
| US7846751B2 | LED chip thermal management and fabrication methods | Electricity | 20 | Active |
| US6130445A | LED with AlGaInP Bragg layer | Electricity | 15 | Expired |
| US6414444B1 | Field-emission display | Electricity | 13 | Expired |
| US5952772A | Diamond electron emitter | Electricity | 10 | Expired |
| US6538368B1 | Electron-emitting devices | Emerging Cross-Sectional Technologies | 8 | Expired |
| US7915622B2 | Textured light emitting diodes | Electricity | 8 | Expired |
| US5066636A | Citrate/ethylenediamine gel method for forming high temperature superconductors | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6753818B2 | Concealed antenna for mobile communication device | Electricity | 7 | Expired |
| US6417522B1 | Led with alternated strain layer | Electricity | 6 | Expired |
| US8118934B2 | Non-polar III-V nitride material and production method | Electricity | 6 | Active |
| US8828849B2 | Production of single-crystal semiconductor material using a nanostructure template | Electricity | 5 | Active |
| US5484853A | Cryogenic adhesives made from epoxy terminated urethanes | Chemistry; Metallurgy | 5 | Expired |
| US8652947B2 | Non-polar III-V nitride semiconductor and growth method | Electricity | 4 | Active |
| US6577661B1 | Semiconductor laser with lateral light confinement by polygonal surface optical grating resonator | Electricity | 4 | Expired |
| US6380050B1 | Method of epitaxially growing a GaN semiconductor layer | Electricity | 4 | Expired |
| US8383493B2 | Production of semiconductor devices | Electricity | 4 | Active |
| US7906411B2 | Deposition technique for producing high quality compound semiconductor materials | Chemistry; Metallurgy | 3 | Expired |
| US6396862B1 | LED with spreading layer | Electricity | 3 | Expired |
| US10023974B2 | Substrates for semiconductor devices | Electricity | 2 | Active |
| US7023892B2 | Semiconductor laser based on matrix, array or single triangle optical cavity with spatially distributed current injection | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.