Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films
US7915626B1 · kind B1 · utility
6Cited by
4References
10Claims
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Key dates
| Filing date | Aug 15, 2006 |
| Grant date | Mar 29, 2011 |
| Priority date | — |
| Expiry date | Oct 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A denticulated Group III nitride structure that is useful for growing AlxGa1-xN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.