Integrated infrared and color CMOS imager sensor
US7915652B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2008 |
| Grant date | Mar 29, 2011 |
| Priority date | — |
| Expiry date | Apr 15, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An integrated infrared (IR) and full color complementary metal oxide semiconductor (CMOS) imager array is provided. The array is built upon a lightly doped p doped silicon (Si) substrate. Each pixel cell includes at least one visible light detection pixel and an IR pixel. Each visible light pixel includes a moderately p doped bowl with a bottom p doped layer and p doped sidewalls. An n doped layer is enclosed by the p doped bowl, and a moderately p doped surface region overlies the n doped layer. A transfer transistor has a gate electrode overlying the p doped sidewalls, a source formed from the n doped layer, and an n+ doped drain connected to a floating diffusion region. The IR pixel is the same, except that there is no bottom p doped layer. An optical wavelength filter overlies the visible light and IR pixels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.