SiC semiconductor device having outer periphery structure
US7915705B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2008 |
| Grant date | Mar 29, 2011 |
| Priority date | — |
| Expiry date | Jan 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A SiC semiconductor device includes: a SiC substrate; a SiC drift layer on the substrate having an impurity concentration lower than the substrate; a semiconductor element in a cell region of the drift layer; an outer periphery structure including a RESURF layer in a surface portion of the drift layer and surrounding the cell region; and an electric field relaxation layer in another surface portion of the drift layer so that the electric field relaxation layer is separated from the RESURF layer. The electric field relaxation layer is disposed on an inside of the RESURF layer so that the electric field relaxation layer is disposed in the cell region. The electric field relaxation layer has a ring shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.