Method of fabricating a semiconductor device, and semiconductor device with a conductive member extending through a substrate and connected to a metal pattern bonded to the substrate
US7915710B2 · kind B2 · utility
41Cited by
4References
2Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 31, 2008 |
| Grant date | Mar 29, 2011 |
| Priority date | — |
| Expiry date | Dec 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06589
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes providing a semiconductor substrate having an active surface, thinning the substrate by removing material from a second surface of the substrate opposite the active surface, bonding a metal carrier to the second surface of the thinned substrate, forming a via opening in the thinned substrate, forming a conductive member in the via opening, and patterning the metal carrier bonded to the second surface of the thinned substrate to form a metal pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.