Semiconductor devices and methods of manufacture thereof

US7919364B2 · kind B2 · utility

Assignee

• NXP B.V. · NL

Inventors

• Jan Sonsky · Leuven, BE
• Gerben Doornbos · Kessel-Lo, BE

Key dates

• Filing date: Jul 9, 2007
• Grant date: Apr 5, 2011
• Expiry date: May 14, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

A FinFET and methods for its manufacture are provided. The method of the invention provides an elegant process for manufacturing FinFETs with separated gates. It is compatible with a wide range of dielectric materials and gate electrode materials, providing that the gate electrode material(s) can be deposited conformally. Provision of at least one upstanding structure (or “dummy fin”) (40) on each side of the fin (4) serves to locally increase the thickness of the gate electrode material layer (70). In particular, as the shortest distance between each upstanding structure (40) and the respective side of the fin (4) is arranged in accordance with the invention to be less than twice the thickness of the conformal layer, the thickness of the gate electrode material layer (70) all the way across this distance between each upstanding structure (40) and the fin (4) is increased relative to that over planar regions of the substrate (2). Thus, following an anisotropic etch to remove gate electrode material (70) overlying the fin (4), some material nevertheless remains between the upstanding structures and the fin. Thus, an enlarged area of gate electrode material is formed for use as a gat…