Germanium substrate-type materials and approach therefor
US7919381B2 · kind B2 · utility
6Cited by
41References
6Claims
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Key dates
| Filing date | Mar 8, 2010 |
| Grant date | Apr 5, 2011 |
| Priority date | — |
| Expiry date | Mar 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.