Methods for forming patterns
US7919413B2 · kind B2 · utility
6Cited by
6References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 6, 2007 |
| Grant date | Apr 5, 2011 |
| Priority date | — |
| Expiry date | Jan 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0338
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming patterns comprises providing a substrate. A set of seed features is formed over the substrate. At least one bi-layer comprising a first layer followed by a second layer is formed on the set of seed features. The first layer and the second layer above the set of seed features are removed. The first layer and the second layer are anisotropically etched successively at least one time to form an opening next to the set of seed features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.