Process of manufacturing a semiconductor device
US7919415B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2007 |
| Grant date | Apr 5, 2011 |
| Priority date | — |
| Expiry date | Feb 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3235
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In. The second III-V compound semiconductor layer is formed over the first III-V compound semiconductor layer and growing an InP layer at regions adjacent the stacked structure to form a stepped structure of InP. The process further includes the step of wet-etching the stepped structure and the second III-V compound semiconductor layer using an etchant containing hydrochloric acid and acetic acid to remove at least the second III-V compound semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.