Method of forming conformal dielectric film having Si-N bonds by PECVD
US7919416B2 · kind B2 · utility
578Cited by
6References
20Claims
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Key dates
| Filing date | Jan 21, 2009 |
| Grant date | Apr 5, 2011 |
| Priority date | — |
| Expiry date | Jan 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.