Phase-change memory element

US7919768B2 · kind B2 · utility

Assignee

• Industrial Technology Research Institute · TW

Inventors

• Frederick Chen · Hsinchu, TW
• Ming-Jinn Tsai · Hsinchu, TW

Key dates

• Filing date: Jul 11, 2008
• Grant date: Apr 5, 2011
• Expiry date: Jul 30, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8418

Abstract

A phase-change memory cell is proposed. The phase-change memory includes a bottom electrode; a phase-change spacer formed to contact the bottom electrode; an electrical conductive layer having a vertical portion and a horizontal portion, wherein the electrical conductive layer electrically connects to the phase-change spacer via the horizontal portion; and a top electrode electrically connected to the electrical conductive layer via the vertical portion of the electrically conductive layer.