Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
US7919791B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2002 |
| Grant date | Apr 5, 2011 |
| Priority date | — |
| Expiry date | Mar 25, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8215
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A Group III-V nitride microelectronic device structure including a delta doped layer and/or a doped superlattice. A delta doping method is described, including the steps of: depositing semiconductor material on a substrate by a first epitaxial film growth process; terminating the deposition of semiconductor material on the substrate to present an epitaxial film surface; delta doping the semiconductor material at the epitaxial film surface, to form a delta doping layer thereon; terminating the delta doping; resuming deposition of semiconductor material to deposit semiconductor material on the delta doping layer, in a second epitaxial film growth process; and continuing the semiconductor material second epitaxial film growth process to a predetermined extent, to form a doped microelectronic device structure, wherein the delta doping layer is internalized in semiconductor material deposited in the first and second epitaxial film growth processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.